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설명
유통업체에서 제공한 Vishay IRFP9140PBF에 대한 설명입니다.
Power MOSFET, General Purpose, P Channel, 100 V, 21 A, 0.2 ohm, TO-247AC, Through Hole
Single P-Channel 100 V 0.2 Ohms Flange Mount Power Mosfet - TO-247AC
Power Field-Effect Transistor, 21A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
P Channel Mosfet, -100V, 21A To-247; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRFP9140PBF.
MOSFET, P, TO-247; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-100V; Current, Id Cont:19A; Resistance, Rds On:0.2ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:76A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:100V
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기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)21 A
Current Rating-21 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance200 mΩ
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.4 nF
Max Operating Temperature175 °C
Max Power Dissipation180 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation180 W
Rds On Max200 mΩ
Recovery Time260 ns
Resistance200 mΩ
Rise Time73 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time34 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)-100 V
Dimensions
Height20.7 mm
Length15.87 mm
Width5.31 mm