Infineon IRFP044NPBF

MOSFET, Power; N-Channel; 0.020 Ohms (Max.) @ 10 V, 29 A; 55 V (Min.); 40 degC/

Transistor MOSFET Negative Channel 55 Volt 53A 3-Pin(3+Tab) TO-247AC

Single N-Channel 55 V 0.02 Ohm 61 nC HEXFET® Power Mosfet - TO-247AC

55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:53A; On Resistance, Rds(on):20mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes

MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:49A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:180A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:100W; Power, Pd:100W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:55V