관련 부품
InfineonIRFR5410TRPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
InfineonIRFR9024NTRPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;D-Pak (TO-252AA);PD 38W
InfineonIRFR6215TRPBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
VishaySI4425DDY-T1-GE3
SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8
설명
유통업체에서 제공한 Infineon IRFN340에 대한 설명입니다.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Compliant Surface Mount Bulk 3 Production (Last Updated: 2 years ago) 125 W 600 mΩ No
400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package, SMD-1-3
Infineon SCT
Trans MOSFET N-CH 400V 10A 3-Pin SMD-1
Power Field-Effect Transistor, 10A I(D), 400V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
HEXFET, Hi-Rel 400V, 10A, 0.550 ohm
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- Infineon Technologies
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- INFINEON TECHNOLOGIE
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기술 사양
Physical
Body MaterialCeramic
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance700 mΩ
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance600 mΩ
PackagingBulk
Power Dissipation125 W