가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | IRFHS8342TRPBF | 0 | 5 | Cut Tape | 15h | |||||||
| HQonline | DS0080767 | 5 | 1 | >1w | ||||||||
| Microchip USA | IRFHS8342TRPBF | 469 | 600 | Tray | 6d | |||||||
| Weyland Electronics Group Pte. Ltd. | IRFHS8342TRPBF | 3,900 | 1 | Tape & Reel | 18h | |||||||
| Win Source | WS-IRFHS8342TRPBF | 97,010 | 20 | 16h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
관련 부품
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설명
유통업체에서 제공한 Infineon IRFHS8342TRPBF에 대한 설명입니다.
INFINEON IRFHS8342TRPBF MOSFET Transistor, N Channel, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 VNew
Single N-Channel 30 V 16 mOhm 4.2 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
Infineon SCT
Power MOSFET, N Channel, 30 V, 19 A, 16 Milliohms, PQFN, 6 Pins, Surface Mount
Trans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-6 (2x2) Polarity: N Variants: Enhancement mode Power dissipation: 2.1 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 8.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CH MOSFET, 30V, 8.8A, 6-PQFN; Transist; N CH MOSFET, 30V, 8.8A, 6-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; No. of Pins:6
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- Infineon Technologies
- INF
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- INFIN
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- INFINEON/IR
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)8.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance600 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Manufacturer Package IdentifierPG-TSDSON-6
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance16 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.1 W
Rds On Max16 mΩ
Resistance16 MΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time5.2 ns
Turn-On Delay Time5.9 ns
Dimensions
Height1 mm