대체 부품
Price @ 1000
$ 1.04
$ 1.52
Stock
1,172,087
265,213
Authorized Distributors
6
3
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
120 A
120 A
Threshold Voltage
4 V
-
Rds On Max
3 mΩ
3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
6.54 nF
6.54 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-27
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
LTB Date2026-05-31
LTD Date2026-11-30
관련 부품
InfineonIRFB3206GPBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
InfineonIRFB7534PBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220 package, TO220-3, RoHS
설명
유통업체에서 제공한 Infineon IRFB3206PBF에 대한 설명입니다.
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 120A TO-220AB
MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, TO-220AB, Pb-Free
Infineon Technologies N channel HEXFET power MOSFET, 60 V, 120 A, TO-220, IRFB3206PBF
Single N-Channel 60V 3 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 300 W
HEXFET Power MOSFET Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3206; Current Id Max:210A; N-channel Gate Charge:120nC; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300mW; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Current Rating210 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time83 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.54 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3 mΩ
Package Quantity1000
Power Dissipation300 W
Rds On Max3 mΩ
Recovery Time50 ns
Resistance3 MΩ
Rise Time82 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time19 ns
Voltage Rating (DC)60 V
Dimensions
Height19.8 mm
Length10.668 mm
Width4.826 mm