관련 부품
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설명
유통업체에서 제공한 Infineon IRFB7537PBF에 대한 설명입니다.
N Channel 60 V 3.3 mO 230 W Flange Mount HexFet Power MosFet - TO-220AB
MOSFET N CH 60V 173A TO-220AB / Trans MOSFET N-CH 60V 173A 3-Pin(3+Tab) TO-220AB Tube
60V 单个 N 通道 HEXFET Power MOSFET, 采用无铅 TO-220 封装, TO220-3, RoHS
Infineon SCT
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W
MOSFET, 60V, 173A, 3.3 MOHM, 142 NC QG, TO-220AB
Power Field-Effect Transistor, 173A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 60V, 173A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 173A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00275ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)173 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time84 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.02 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.3 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max3.3 mΩ
Rise Time105 ns
Schedule B8541290080
Threshold Voltage3.7 V
Turn-Off Delay Time82 ns
Turn-On Delay Time15 ns
Dimensions
Height19.8 mm
Length10.67 mm
Width4.83 mm