Infineon IRFB260NPBF

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 56A;TO-220AB;PD 380W;VGS +/-20V

Single N-Channel 200 V 40 mOhm 220 nC HEXFET® Power Mosfet - TO-220-3

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Trans MOSFET N-CH 200V 56A 3-Pin(3+Tab) TO-220AB

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 380 W

Power Field-Effect Transistor, 56A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, 200V, 56A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:380W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Junction to Case Thermal Resistance A:0.4°C/W; On State resistance @ Vgs = 10V:40ohm; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.