공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-08-18
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
InfineonIRFB4228PBF
150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
설명
유통업체에서 제공한 Infineon IRFB4227PBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 19.7 Milliohms;ID 65A;TO-220AB;PD 330W
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Infineon Technologies N channel HEXFET power MOSFET, 200 V, 65 A, TO-220, IRFB4227PBF
Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 65A TO-220AB
Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3
Power MOSFET, N Channel, 200 V, 65 A, 0.024 ohm, TO-220AB, Through Hole
HEXFET POWER MOSFET Power Field-Effect Transistor, 65A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 200V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):19.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:140mJ; Capacitance Ciss Typ:4600pF; Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-220AB; Power Dissipation Pd:190W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 65 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 19.7 / Gate-Source Voltage V = 30 / Fall Time ns = 31 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 33 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 330
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)65 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage200 V
Min Operating Temperature-40 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance26 mΩ
Package Quantity1000
Power Dissipation190 W
Rds On Max24 mΩ
Recovery Time150 ns
Resistance24 MΩ
Rise Time20 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time21 ns
Turn-On Delay Time33 ns
Dimensions
Height19.8 mm
Length10.6426 mm
Width4.82 mm