대체 부품
Price @ 1000
$ 1.085
$ 1.085
Stock
799,623
1,348,776
1,348,776
Authorized Distributors
0
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
SOIC
Drain to Source Voltage (Vdss)
-30 V
-30 V
-30 V
Continuous Drain Current (ID)
20 A
20 A
20 A
Threshold Voltage
-1.8 V
-1.8 V
-1.8 V
Rds On Max
4.6 mΩ
4.6 mΩ
4.6 mΩ
Gate to Source Voltage (Vgs)
20 V
25 V
25 V
Power Dissipation
2.5 W
1 W
1 W
Input Capacitance
5.25 nF
7.54 nF
7.54 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-24
Lifecycle StatusObsolete (Last Updated: 5 months ago)
관련 부품
InfineonIRF7832TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7832PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
설명
유통업체에서 제공한 Infineon IRF9310PBF에 대한 설명입니다.
Single P-Channel 30 V 6.8 mOhm 58 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 30V 20A 8-Pin SOIC N Tube
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET,P CH,30V,20A,SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-20A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.25 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Channels1
Number of Elements1
On-State Resistance4.6 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max4.6 mΩ
Recovery Time107 ns
Resistance4.6 MΩ
Rise Time47 ns
Threshold Voltage-1.8 V
Turn-Off Delay Time65 ns
Turn-On Delay Time25 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책