공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-10-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-06-01
LTD Date2011-12-01
관련 부품
설명
유통업체에서 제공한 onsemi FDS8670에 대한 설명입니다.
Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
MOSFETs 30V N-CHANNEL POWERTRENCH MOSFET
Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:105A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
This device has been designed specifically to improvethe efficiency of DC-DC converters. Using newtechniques in MOSFET construction, the variouscomponents of gate charge and capacitance have beenoptimized to reduce switching losses. Low gateresistance and very low Miller charge enable excellentperformance with both adaptive and fixed dead timegate drive circuits. Very low Rds(on) has beenmaintained to provide an extremely versatile device.
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기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.7 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time68 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.04 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.4 V
Number of Elements1
Power Dissipation2.5 W
Rds On Max3.7 mΩ
Rise Time11 ns
TerminationSMD/SMT
Turn-Off Delay Time56 ns