Infineon IRF8714PBF

Name: Infineon IRF8714PBF
Brand: Infineon
SKU: IRF8714PBF

Single N-Channel 30 V 13 mOhm 12 nC HEXFET® Power Mosfet - SOIC-8

Obsolete

제조업체 페이지 데이터시트

가격 및 재고

공인 유통업체

비공인 재고 유통업체

비공인 딜러

모든 가격 할인 보기

Distributor	SKU		Min	Pkg
Avnet	IRF8714PBF	2,948	10K					0.071	16h
Flip Electronics	IRF8714PBF	2,948							6d
RS (Formerly Allied Electronics)	IRF8714PBF	0	3800	Bulk				0.590	3h
Farnell	IRF8714PBF	0	5		0.559*	0.367*	0.293*	0.288*	14h
Win Source	WS-IRF8714PBF	10,090	115				0.343	0.343	15h

재고 내역

3개월 추세: -14.29%

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

대체 부품

1개의 부품을 구매할 수 있습니다

데이터시트 및 문서

Infineon IRF8714PBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet9 페이지18년 전

Datasheet10 페이지18년 전

iiiC

재고 내역

3개월간의 트렌드:

-14.29%

대체 부품

이 부품

대체 부품

InfineonIRF8714PBF

InfineonIRF8714TRPBF

Price @ 1000

$ 0.268

Stock

1,825,192

4,927,774

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

14 A

Threshold Voltage

1.8 V

Rds On Max

8.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

Input Capacitance

1.02 nF

공급망

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-08-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

설명

유통업체에서 제공한 Infineon IRF8714PBF에 대한 설명입니다.

Single N-Channel 30 V 13 mOhm 12 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

MOSFET, N Ch., 30V, 14A, 8.7 MOHM, 8.1 NC QG, SO-8, Pb-Free

RS (Formerly Allied Electronics)

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Trans MOSFET N-CH 30V 14A 8-Pin SOIC

Avnet

Benefits: RoHS Compliant | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

Infineon

Power Field-Effect Transistor, 14A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

N-CH 30V 14A 8,7mOhm SO8 RoHSconf

Rutronik

Trench_Mosfets Rohs Compliant: Yes

Newark

MOSFET, N SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:8.1nC; Current Id Max:14A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:110A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

element14 APAC