공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
Diodes Inc.DMG4406LSS-13
Single N-Channel 30 V 2 W 12.5 nC Silicon Surface Mount Mosfet - SOIC-8
Diodes Inc.DMC3028LSD-13
Dual N/P-Channel 30 V 0.045/0.041 Ohm 5.2/16.4 nC 2.1 W Silicon Mosfet - SOIC-8
설명
유통업체에서 제공한 Infineon IRF8113GPBF에 대한 설명입니다.
N CH POWER MOSFET, HEXFET, 30V, 17.2A, SOIC-8; Transistor Polarity:N Channel; Co
Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC
Power Field-Effect Transistor, 17.2A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)17.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.6 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time3.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.91 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.2 V
Number of Elements1
Power Dissipation2.5 W
Rds On Max5.6 mΩ
Rise Time8.9 ns
Turn-Off Delay Time17 ns
Turn-On Delay Time13 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm