Infineon IRF830PBF
$ 0.963
관련 부품
InfineonIPD80R1K0CEATMA1
MOSFET N-CH 800V 5.7A TO252-3 N-Channel 800 V 5.7A (Tc) 83W (Tc) Surface Mount PG-TO252-3
InfineonIPD80R1K0CEBTMA1
MOSFET N-CH 800V 5.7A TO252-3 N-Channel 800 V 5.7A (Tc) 83W (Tc) Surface Mount PG-TO252-3-11
설명
유통업체에서 제공한 Infineon IRF830PBF에 대한 설명입니다.
MOSFET N-CH 500V 4.5A TO220AB N-Channel 500 V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
74W(Tc) 20V 4V@ 250µA 38nC@ 10 V 1individualNChannel 500V 1.5Ω@ 2.7A,10V 4.5A 610pF@25V TO-220AB Through hole mounting
CM TRANS IRF830N-CH FET TO220
CAP CER 0.68UF 16V X5R 1206
IRF830PBF - PLANAR 100V;
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
Number of Terminals3
Technical
Continuous Drain Current (ID)4.5 A
Current Rating4.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vds)500 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation74 W
Turn-Off Delay Time42 ns
Turn-On Delay Time8.2 ns
Voltage Rating (DC)500 V
Dimensions
Height19.3 mm