공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
관련 부품
InfineonIRFB812PBF
MOSFET N CH 500V 3.6A TO220AB / Trans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube
설명
유통업체에서 제공한 Vishay IRFBC30PBF에 대한 설명입니다.
Single N-Channel 600 V 2.2 Ohms Flange Mount Power Mosfet - TO-220AB
IRFBC30PBF N-CHANNEL MOSFET TRANSISTOR, 3.6 A, 600 V, 3-PIN TO-220AB
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 74 W
POWER MOSFET Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)3.6 A
Current44 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance2.2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance660 pF
Max Operating Temperature150 °C
Max Power Dissipation74 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation74 W
Rds On Max2.2 Ω
Recovery Time810 ns
Resistance2.2 Ω
Rise Time13 ns
Threshold Voltage4 V
Turn-Off Delay Time35 ns
Turn-On Delay Time11 ns
Voltage600 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm