가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 13AC3532 | 526 | 1 | 23h | ||||||||
| Newark | IRF7855TRPBF | 526 | 1 | Cut Tape | ||||||||
| Future Electronics | IRF7855TRPBF | 52,000 | 4K | Tape & Reel | ||||||||
| Rochester Electronics | IRF7855TRPBF | 998 | 21h | |||||||||
| DigiKey | IRF7855TRPBFCT-ND | 857 | 1 | Cut Tape |
대체 부품
Price @ 1000
$ 0.67
$ 0.52
Stock
702,518
85,194
Authorized Distributors
6
3
Mount
Surface Mount
Surface Mount
Case/Package
SO
SOIC
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
-
4.9 V
Rds On Max
9.4 mΩ
9.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
1.56 nF
1.56 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-01-05
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
InfineonIRF7478QPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 26 Milliohms;ID 4.2A;SO-8;PD 2.5W;VGS +/-20V
Diodes Inc.ZXMC6A09DN8TA
N & P Channel 60 V 5.1 A 2.1 W Surface Mount Complementary Mosfet - SOIC-8
VishaySI9407BDY-T1-GE3
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
설명
유통업체에서 제공한 Infineon IRF7855TRPBF에 대한 설명입니다.
Single N-Channel 60V 9.4 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8
60V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 12A I(D), 60V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):9.4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance9.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.56 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance9.4 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max9.4 mΩ
Resistance9.4 MΩ
Rise Time13 ns
Schedule B8541290080
Turn-Off Delay Time16 ns
Turn-On Delay Time8.7 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm