가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRF7351TRPBF | 8,000 | 4K | 2d | ||||||||
| Newark | IRF7351TRPBF | 2,663 | 5 | Cut Tape | ||||||||
| Arrow Electronics | IRF7351TRPBF | 10,689 | 1 | |||||||||
| Future Electronics | IRF7351TRPBF | 16,000 | 4K | Tape & Reel | ||||||||
| DigiKey | IRF7351TRPBFCT-ND | 29,076 | 1 | Cut Tape |
대체 부품
Price @ 1000
$ 0.689
$ 1.14
Stock
1,376,031
1,053,044
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
SO
SO
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
8 A
8 A
Threshold Voltage
-
4 V
Rds On Max
17.8 mΩ
17.8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2 W
2 W
Input Capacitance
1.33 nF
1.33 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-18
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonBSO615CGHUMA1
Dual Mosfet, N And P Channel, 3.1 A, 60 V, 0.07 Ohm, 10 V, 1.6 V Rohs Compliant: Yes
InfineonIRF7478QPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 26 Milliohms;ID 4.2A;SO-8;PD 2.5W;VGS +/-20V
설명
유통업체에서 제공한 Infineon IRF7351TRPBF에 대한 설명입니다.
Dual N-Channel 60 V 17.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 60V 8A 8-Pin SOIC T/R
Power Field-Effect Transistor, 8A I(D), 60V, 0.0178ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Compatible with Existing Surface Mount Techniques; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Dual N-Channel MOSFET
N CHANNEL MOSFET, 60V, 8A, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:8A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.0178ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
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- Infineon Technologies
- INF
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- INFINE
- INFIN
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- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance17.8 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Fall Time6.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.33 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance17.8 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max17.8 mΩ
Rise Time5.9 ns
Schedule B8541290080
Turn-Off Delay Time17 ns
Turn-On Delay Time5.1 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm