가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7530TRPBF | 0 | 5 | Bulk | 10h | |||||||
| Farnell | IRF7530TRPBF | 0 | 1 | Cut Tape | 4h | |||||||
| Microchip USA | IRF7530TRPBF | 1,346 | 3K | 11h | ||||||||
| Weyland Electronics Group Pte. Ltd. | IRF7530TRPBF | 44,000 | 1 | Tape & Reel | 21h | |||||||
| Win Source | WS-IRF7530 | 44,000 | 15 | 19h |
대체 부품
Price @ 1000
$ 0.75
$ 0.48
Stock
503,061
107,080
Authorized Distributors
2
1
Mount
Surface Mount
Surface Mount
Case/Package
MSOP
-
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
5.4 A
5.4 A
Threshold Voltage
1.2 V
-
Rds On Max
30 mΩ
30 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
1.3 W
1.3 W
Input Capacitance
1.31 nF
1.31 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-09-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-13
LTD Date2008-09-13
관련 부품
설명
유통업체에서 제공한 Infineon IRF7530TRPBF에 대한 설명입니다.
Dual N-Channel 20 V 0.03 Ohm 26 nC HEXFET® Power Mosfet - MICRO-8
Transistor MOSFET Array Dual N-CH 20V 5.4A 8-Pin Micro8 T/R
Avnet Japan
20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS
Infineon SCT
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:5.4A; Package/Case:8-uSOIC; Power Dissipation, Pd:1.3W; Drain Source On Resistance @ 2.7V:45mohm ;RoHS Compliant: Yes
MOSFET, DUAL N-CH , 20V, 5.4A, USOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on; Available until stocks are exhausted Alternative available
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 5.4 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 30 / Gate-Source Voltage V = 12 / Fall Time ns = 16 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 8.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageMSOP
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.4 A
Current Rating5.4 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time16 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.31 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels2
Number of Elements2
On-State Resistance30 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max30 mΩ
Resistance30 mΩ
Rise Time11 ns
Schedule B8541290080
Threshold Voltage1.2 V
Turn-Off Delay Time36 ns
Turn-On Delay Time8.5 ns
Voltage Rating (DC)20 V
Dimensions
Height1.11 mm
Length3 mm
Width3 mm