MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).