가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRF7495TRPBF | 385 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRF7495TRPBF | 3,218 | 1 | |||||||||
| Future Electronics | IRF7495TRPBF | 64,000 | 4K | Tape & Reel | ||||||||
| Rochester Electronics | IRF7495TRPBF | 3,108 | 18h | |||||||||
| DigiKey | IRF7495TRPBFCT-ND | 8,331 | 1 | Cut Tape |
공급망
Country of OriginMainland China, Philippines, Taiwan, Thailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-09-21
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF7473TRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 22Milliohms;ID 6.9A;SO-8;PD 2.5W;VGS +/-20
InfineonIRF7493TRPBF
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 11.5 Milliohms;ID 9.3A;SO-8;PD 2.5W;VGS +/-2
VishaySI4056DY-T1-GE3
MOSFET, N-CH, 100V, 11.1A, SOIC-8; Transistor Polarity:N Channel; Continuous Dra
VishaySI7456DDP-T1-GE3
VISHAY SI7456DDP-T1-GE3 MOSFET Transistor, N Channel, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V
설명
유통업체에서 제공한 Infineon IRF7495TRPBF에 대한 설명입니다.
Single N-Channel 100 V 2.5 W 34 nC Hexfet Power Mosfet Surface Mount - SOIC-8
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20
Trans MOSFET N-CH 100V 7.3A 8-Pin SOIC T/R / MOSFET N-CH 100V 7.3A 8-SOIC
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 7.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:2.5W; No. of Pins:8Pins RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 7.3 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 20 / Fall Time ns = 36 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 8.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)7.3 A
Current Rating7.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time36 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.53 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance22 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max4.6 mΩ
Resistance22 MΩ
Rise Time13 ns
Schedule B8541290080
Turn-Off Delay Time10 ns
Turn-On Delay Time8.7 ns
Voltage Rating (DC)100 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책