공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-09-16
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonIRF7473TRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 22Milliohms;ID 6.9A;SO-8;PD 2.5W;VGS +/-20
InfineonIRF7495TRPBF
Single N-Channel 100 V 2.5 W 34 nC Hexfet Power Mosfet Surface Mount - SOIC-8
VishaySI4056DY-T1-GE3
MOSFET, N-CH, 100V, 11.1A, SOIC-8; Transistor Polarity:N Channel; Continuous Dra
VishaySI7454DDP-T1-GE3
VISHAY SI7454DDP-T1-GE3 MOSFET Transistor, N Channel, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V
설명
유통업체에서 제공한 Infineon IRF7490TRPBF에 대한 설명입니다.
Single N-Channel 100V 39 mOhm 56 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 100V 5.4A 8-Pin SOIC T/R
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:5.4A; On Resistance, Rds(on):39mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 39 / Gate-Source Voltage V = 20 / Fall Time ns = 11 / Rise Time ns = 4.2 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
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기술 사양
Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.4 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance39 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.72 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance39 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max39 mΩ
Rise Time4.2 ns
Turn-Off Delay Time51 ns
Turn-On Delay Time13 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm