가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRF7465TRPBF | 4,165 | 1 | |||||||||
| DigiKey | IRF7465PBFCT-ND | 8,103 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | IRF7465TRPBF | 0 | 20 | Bulk | 11h | |||||||
| Future Electronics | IRF7465TRPBF | 0 | 4K | Tape & Reel | ||||||||
| Farnell | IRF7465TRPBF | 1,009 | 4K | Custom Reel | 5h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-02-08
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
설명
유통업체에서 제공한 Infineon IRF7465TRPBF에 대한 설명입니다.
Single N-Channel 150 V 0.28 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 150V 1.9A 8-Pin SOIC T/R
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 1.9A I(D), 150V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:30V; Power Dissipation Pd:2.5W
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.9 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 30 / Fall Time ns = 9 / Rise Time ns = 1.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2.5
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)1.9 A
Current Rating1.9 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance330 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs30 V
Number of Channels1
Number of Elements1
On-State Resistance280 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max280 mΩ
Rise Time1.2 ns
Schedule B8541290080
Threshold Voltage30 V
Turn-Off Delay Time10 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)150 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm