Infineon IRF7465PBF

IRF7465PBF N-channel MOSFET Transistor,1.9 A, 150 V, 8-Pin SOIC

High frequency DC-DC converters, Lead-Free | MOSFET N-CH 150V 1.9A 8-SOIC

Trans MOSFET N-CH 150V 1.9A 8-Pin SOIC

150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.9A; Fall Time tf:9ns; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:15A; Rise Time:1.2ns; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design