공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
관련 부품
InfineonIRF9530NPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V
InfineonIRF530NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S
설명
유통업체에서 제공한 Vishay IRF530PBF에 대한 설명입니다.
Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3
Power MOSFET, N Channel, 100 V, 14 A, 0.16 ohm, TO-220AB, Through Hole
Trans MOSFET N-CH 100V 14A 3-Pin (3+Tab) TO-220AB
Vishay N channel power MOSFET, 100 V, 14 A, TO-220, IRF530PBF
Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 100V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:14A; Junction to Case Thermal Resistance A:1.7°C/W; Package / Case:TO-220AB; Power Dissipation Pd:88W; Power Dissipation Pd:88W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance670 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation88 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation88 W
Rds On Max160 mΩ
Recovery Time280 ns
Resistance160 mΩ
Rise Time30 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time23 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)100 V
Dimensions
Height19.89 mm
Length10.41 mm
Width4.7 mm