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Price @ 1000
$ 1.93
$ 1.47
Stock
730,925
311,043
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220AB
Drain to Source Voltage (Vds)
55 V
55 V
Continuous Drain Current (ID)
75 A
160 A
Threshold Voltage
4 V
2 V
Rds On Max
3.3 mΩ
3.3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
130 W
300 W
Input Capacitance
7.96 nF
7.96 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-21
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2012-12-28
LTD Date2013-06-28
관련 부품
InfineonIRF2805PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 3.9Milliohms;ID 175A;TO-220AB;PD 330W;-55de
InfineonIRF1405ZPBF
MOSFET N-CH 55V 75A TO220AB N-Channel 55 V 75A (Tc) 230W (Tc) Through Hole TO-220AB
설명
유통업체에서 제공한 Infineon IRF3805PBF에 대한 설명입니다.
Single N-Channel 55 V 3.3 mOhm 190 nC HEXFET® Power Mosfet - TO-220-3
MOSFET N-CH 55V 75A TO220AB N-Channel 55 V 75A (Tc) 330W (Tc) Through Hole TO-220AB
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
MOSFET, 55V, 220A, 3.3 MOHM, 190 NC QG,TO-220AB
Trans MOSFET N-CH 55V 210A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 220A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
300W(Tc) 20V 4V@ 250µA 290nC@ 10 V 1individualNChannel 55V 3.3mΩ@ 75A,10V 75A 7.96nF@25V TO-220AB Through hole mounting 10mm*4.4mm*15.65mm
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:210A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vds)55 V
Element ConfigurationSingle
Fall Time78 ns
Forward Voltage1.3 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.96 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.3 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation130 W
Rds On Max3.3 mΩ
Resistance3.3 MΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time93 ns
Turn-On Delay Time150 ns
Voltage Rating (DC)55 V
Dimensions
Height20.56 mm
Length10.668 mm
Width4.826 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책