가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF3711STRLPBF | 0 | 3200 | Bulk | 7h | |||||||
| Win Source | WS-IRF3711STRLPBF | 4,730 | 160 | 18h | ||||||||
| Worldway Electronics | IRF3711STRLPBF | 14,987 | 7 | Tape & Reel | 17h | |||||||
| Esaler Electronic | IRF3711STRLPBF | 3,200 | 1d | |||||||||
| Anlinkda | IRF3711STRLPBF | 44,970 | 23h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-09-19
LTD Date2013-03-19
관련 부품
InfineonIPB80N04S404ATMA1
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor
InfineonAUIRFS8403
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
설명
유통업체에서 제공한 Infineon IRF3711STRLPBF에 대한 설명입니다.
Single N-Channel 20 V 6 mOhm 44 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 20V 110A 3-Pin(2+Tab) D2PAK T/R
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET, 20V, 110A, 6 MOHM, 29 NC QG, D2-PAK
Power Field-Effect Transistor, 75A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating110 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)20 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.98 nF
Max Operating Temperature150 °C
Max Power Dissipation120 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation120 W
Rds On Max6 mΩ
Resistance6 MΩ
Rise Time220 ns
Voltage Rating (DC)20 V