Infineon IRF3710ZSPBF

Name: Infineon IRF3710ZSPBF
Brand: Infineon
SKU: IRF3710ZSPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 14MILLIOHMS; Id 59A; D2PAK; Pd 160W; Vgs +/-20

$ 1.03

Obsolete

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가격 및 재고

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모든 가격 할인 보기

Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRF3710ZSPBF	66					1.240	1.030	0.918	14h
RS (Formerly Allied Electronics)		IRF3710ZSPBF	0	550	Bulk				4.290	3.900	6h
Farnell		IRF3710ZSPBF	0	1		2.452*	2.452*	1.734*	1.279*	1.279*	1d
Win Source		WS-IRF3710ZSPBF	20	19				2.407	2.086	2.086	15h
Worldway Electronics		IRF3710ZSPBF	14,505	7	Tube		0.294	0.285	0.270	0.270	14h

재고 내역

3개월 추세: +0.00%

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

대체 부품

0개의 부품을 구매할 수 있습니다

데이터시트 및 문서

Infineon IRF3710ZSPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet12 페이지15년 전

Datasheet13 페이지15년 전

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

재고 내역

3개월간의 트렌드:

+0.00%

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-05-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

설명

유통업체에서 제공한 Infineon IRF3710ZSPBF에 대한 설명입니다.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;D2Pak;PD 160W;VGS +/-20

RS (Formerly Allied Electronics)

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK Tube

Verical

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

Infineon

MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 160 W

Distrelec

Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):18mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

Newark

MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:170mJ; Capacitance Ciss Typ:2900pF; Current Id Max:59A; Package / Case:D2-PAK; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulse Current Idm:240A; Reverse Recovery Time trr Typ:50ns; SMD Marking:F3710; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC