Infineon IRL3103PBF

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 12 Milliohms;ID 64A;TO-220AB;PD 94W;VGS +/-1

Single N-Channel 30 V 12 mOhm 33 nC HEXFET® Power Mosfet - TO-220-3

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level

Trans MOSFET N-CH 30V 64A 3-Pin(3+Tab) TO-220AB

Infineon IRL3103PbF N-Ch MOSFET Vds=30V 64A TO-220AB TH 3+Tab

Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

N CHANNEL MOSFET, 30V, 64A TO-220AB; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:83W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V