공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-27
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2026-03-31
LTD Date2026-09-30
관련 부품
InfineonAUIRF1405ZL
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
InfineonIRFSL7540PBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
InfineonIRFSL3206PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
설명
유통업체에서 제공한 Infineon IRFSL3306PBF에 대한 설명입니다.
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:160A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Current Rating160 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance4.2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.52 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.2 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max4.2 mΩ
Rise Time76 ns
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)60 V
Dimensions
Height9.65 mm
Length10.668 mm
Width4.826 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책