공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTB120N4LF6
N-channel 40 V, 3.1 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
STMicroelectronicsSTB120N4F6
N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package
InfineonIRL3705NSTRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 89A;D2Pak;PD 170W;VGS +/-16V;-55d
InfineonIRF1010NSTRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;D2Pak;PD 180W;VGS +/-20V
설명
유통업체에서 제공한 Infineon IRF1405ZSTRLPBF에 대한 설명입니다.
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Single N-Channel 55 V 4.9 mOhm 180 nC HEXFET® Power Mosfet - TO-262
Trans MOSFET N-CH 55V 150A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N CH MOSFET, HEXFET AUTOMOTIVE, 55V 150A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:55V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance4.9 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time82 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.78 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.9 mΩ
Package Quantity800
Power Dissipation230 W
Rds On Max4.9 mΩ
Rise Time110 ns
Turn-Off Delay Time48 ns
Turn-On Delay Time18 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm