데이터시트 및 문서
Infineon IRF1404LPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
공식 데이터시트9년 전
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-02-11
Lifecycle StatusObsolete (Last Updated: 6 months ago)
관련 부품
InfineonAUIRF1404ZL
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
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MOSFET N-CH 60V 173A TO262 N-Channel 60 V 173A (Tc) 230W (Tc) Through Hole TO-262
InfineonIRF1405LPBF
MOSFET N-CH 55V 131A TO262 N-Channel 55 V 131A (Tc) 200W (Tc) Through Hole TO-262
설명
유통업체에서 제공한 Infineon IRF1404LPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 162A;TO-262;PD 200W;VGS +/-20V
MOSFET N-CH 40V 162A TO262 "N-Channel 40 V 162A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262"
Single N-Channel 40 V 0.004 Ohm 160 nC HEXFET® Power Mosfet - TO-262
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Infineon NChannel EnhancedMOSTube HEXFETseries, Vds=40 V, 162 A, I2PAK (TO-262)encapsulation, Through hole mounting, 3Pin
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Mosfet, N-Ch, 40V, 162A, To-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0035Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon Technologies IRF1404LPBF
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating162 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.36 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance4 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max4 mΩ
Resistance4 mΩ
Rise Time140 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time72 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)40 V
Dimensions
Height15.01 mm
Length10.668 mm
Width4.826 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책