공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-28
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonAUIRF1405ZL
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
InfineonIRF1404LPBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 162A;TO-262;PD 200W;VGS +/-20V
InfineonAUIRF1404ZL
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
설명
유통업체에서 제공한 Infineon IRF1405LPBF에 대한 설명입니다.
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET POWER MOSFET Power Field-Effect Transistor, 131A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:131A; On Resistance, Rds(on):5.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
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- INFI
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- INFIEON
- INFINEON TECH
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- INFINEON/IR
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating131 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance5.3 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.48 nF
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation200 W
Rds On Max5.3 mΩ
Rise Time190 ns
Turn-Off Delay Time130 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)55 V
Dimensions
Height9.65 mm
Length10.668 mm
Width4.826 mm