대체 부품
이 부품
대체 부품
Price @ 1000
$ 1.368
$ 1.47
Stock
369,806
197,646
Authorized Distributors
5
2
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vds)
24 V
24 V
Continuous Drain Current (ID)
195 A
195 A
Threshold Voltage
4 V
2 V
Rds On Max
1.5 mΩ
1.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
7.59 nF
7.59 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-11-10
Lifecycle StatusObsolete (Last Updated: 8 months ago)
관련 부품
InfineonIRF3703PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.3Milliohms;ID 210A;TO-220AB;PD 230W;-55de
InfineonIRF2903ZPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de
설명
유통업체에서 제공한 Infineon IRF1324PBF에 대한 설명입니다.
24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
Infineon SCT
Infineon Technologies N channel HEXFET power MOSFET, 24 V, 195 A, TO-220, IRF1324PBF
Trans MOSFET N-CH 24V 353A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 195A I(D), 24V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH 24V 195A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:24V; On Resistance Rds(on):1.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:340A; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:24V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage24 V
Drain to Source Resistance1.5 mΩ
Drain to Source Voltage (Vds)24 V
Dual Supply Voltage24 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.59 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage24 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance1.5 mΩ
Package Quantity1000
Power Dissipation300 W
Rds On Max1.5 mΩ
Rise Time190 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time83 ns
Turn-On Delay Time17 ns
Dimensions
Height20.56 mm
Length10.668 mm
Width4.826 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
규정 준수 정책