관련 부품
InfineonIPW60R190C6FKSA1
151W 20V 3.5V 63nC@ 10V 1N 600V 190m¦¸@ 10V 20.2A 1.4nF@ 100V 15.9mm*5.03mm*20.9mm
설명
유통업체에서 제공한 Infineon IPW65R190CFD에 대한 설명입니다.
MOSFET Transistor, N Channel, 17.5 A, 700 V, 0.445 ohm, 10 V, 4 V
Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube
650V 17.5A 190mΩ@10V,7.3A 151W 4.5V@730uA 1 N-Channel TO-247-3 MOSFETs ROHS
650V CoolMOS C6 CFD POWER Transistor
Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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기술 사양
Physical
Case/PackageTO-247-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17.5 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time6.4 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.85 nF
Max Operating Temperature150 °C
Max Power Dissipation151 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation151 W
Rds On Max190 mΩ
Rise Time8.4 ns
Threshold Voltage4 V