공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-09
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 STMicroelectronics STU5N62K3에 대한 설명입니다.
N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in IPAK package
70W(Tc) 30V 4.5V@ 50¦ÌA 26nC@ 10 V 1N 620V 1.6¦¸@ 2.1A,10V 4.2A 680pF@50V IPAK,TO-251 6.2mm
Trans MOSFET N-CH 620V 4.2A 3-Pin(3+Tab) IPAK Tube
MOSFET N-Ch 620V 1.28 Ohm 4.2A SuperMESH 3
Power Field-Effect Transistor, 4.2A I(D), 620V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Power MOSFETs, 620V, 4.2A, IPAK, Tube
STMicroelectronics SCT
MOSFET, N CH, 620V, 4.2A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:620V; On Resistance Rds(on):1.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
제조업체 별칭
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- STM
- SGS
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- STMICROE
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- STMICR
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- ST MICROELECTRONIC
- SGS THOMPSON
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- WAFERSCALE
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- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.2 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance1.6 Ω
Drain to Source Voltage (Vdss)620 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance680 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max1.6 Ω
Resistance1.6 Ω
Rise Time8 ns
Threshold Voltage3.75 V
Turn-Off Delay Time40 ns
Turn-On Delay Time12 ns
Dimensions
Height6.9 mm
Length6.6 mm
Width2.4 mm