Infineon IPS65R1K5CEAKMA1

MOSFET N-CH 650V 3.1A TO251 / N-Channel 650 V 3.1A (Tc) 28W (Tc) Through Hole TO-251

Trans MOSFET N-CH 650V 5.2A 3-Pin(3+Tab) TO-251 Tube

Power Field-Effect Transistor, 650V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

N-ch 650V 3, 1A 1500MOHM TO251SL, PG-TO251-3, RoHS

650V, 8.3A, 15OHM, IPAK (SHORT LEADS)

IPS65R1K5 650V AND 700V COOLMOS N-CHANN;

Mosfet, N-Ch, 650V, 5.2A, To-251-3; Transistor Polarity:n Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):1.26Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV