대체 부품
Price @ 1000
$ 2.603
Stock
58,920
85,295
Authorized Distributors
1
5
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
22.4 A
22.4 A
Threshold Voltage
-
-
Rds On Max
150 mΩ
150 mΩ
Gate to Source Voltage (Vgs)
30 V
20 V
Power Dissipation
195.3 W
195.3 W
Input Capacitance
2.34 nF
2.34 nF
공급망
Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-11-16
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2023-08-31
LTD Date2024-02-29
관련 부품
STMicroelectronicsSTP31N65M5
N-channel 650 V, 0.124 Ohm, 22 A MDmesh(TM) V Power MOSFET in TO-220 package
STMicroelectronicsSTP21N65M5
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220
설명
유통업체에서 제공한 Infineon IPP65R150CFDXKSA1에 대한 설명입니다.
Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3+Tab) TO-220 Tube
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 650V, 22.4A, To-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IPP65R150CFDXKSA1
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)22.4 A
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time5.6 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.34 nF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation195.3 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance150 mΩ
Package Quantity500
Power Dissipation195.3 W
Rds On Max150 mΩ
Rise Time7.6 ns
Turn-Off Delay Time52.8 ns
Turn-On Delay Time12.4 ns