공급망
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-24
Lifecycle StatusNRND (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTP32NM50N
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-220 package
STMicroelectronicsSTP34NM60N
N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-220 package
InfineonIPP60R165CPXKSA1
192W 20V 2.5V 39nC@ 10V 1N 650V 165m¦¸@ 10V 21A 2nF@ 100V TO-220-3 10mm*4.4mm*15.65mm
STMicroelectronicsSTP33N60DM2
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
설명
유통업체에서 제공한 Infineon IPP50R140CPXKSA1에 대한 설명입니다.
Trans MOSFET N-CH 500V 23A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.
MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:550V; Current, Id Cont:23A; On State Resistance:0.14ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:550V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:192W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:23A; Package / Case:TO-220; Power Dissipation Pd:192W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:550V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)3.5 V
Input Capacitance2.54 nF
Max Dual Supply Voltage500 V
Max Operating Temperature150 °C
Max Power Dissipation192 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance140 mΩ
Package Quantity500
Power Dissipation192 W
Rds On Max140 mΩ
Rise Time14 ns
Schedule B8541290080
Turn-On Delay Time35 ns
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책