Infineon IPP60R160C6XKSA1

Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220

IPP60R160C6 Series 600 V 23.8 A 160 mOhm Single N-Channel MOSFET - TO-220-3

Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

MOSFET,N CH,600V,23.8A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:176W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23.8A; Power Dissipation Pd:176W; Voltage Vgs Max:30V

CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 23.8 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 160 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 96 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 176