공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-03-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
관련 부품
InfineonIPI040N06N3GXKSA1
OptiMOS™3 Power-Transistor Features for sync. rectification, drives and dc/dc SMPS
InfineonIPI029N06NAKSA1
N-Channel 60 V 100 A 3 W Through Hole OptiMOSTM Power Transistor - PG-TO262-3
설명
유통업체에서 제공한 Infineon IPI90N06S4L04AKSA2에 대한 설명입니다.
MOSFET N-CH 60V 90A TO262-3 / N-Channel 60 V 90A (Tc) 150W (Tc) Through Hole PG-TO262-3-1
60V, N-Ch, 3.4 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 90A Automotive AEC-Q101 3-Pin(3+Tab) TO-262 Tube
Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
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기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)90 A
Drain to Source Resistance3.4 mΩ
Drain to Source Voltage (Vdss)60 V
Input Capacitance13 nF
Max Dual Supply Voltage60 V
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance3.4 mΩ
Package Quantity500
Power Dissipation150 W
Rds On Max3.7 mΩ