공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-09-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-01-31
LTD Date2011-07-31
관련 부품
InfineonIPI024N06N3GXKSA1
OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.
InfineonIPI120N04S402AKSA1
40V, N-Ch, 2.1 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS
InfineonAUIRFSL8405
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
설명
유통업체에서 제공한 Infineon IPI100N06S3L-03에 대한 설명입니다.
Trans MOSFET N-CH 55V 100A Automotive 3-Pin(3+Tab) TO-262
Power Field-Effect Transistor, 100A I(D), 55V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
OPTLMOS N-CHANNEL POWER MOSFET
MOSFET N-CH 55V 100A TO262-3
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- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)100 A
Current Rating100 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance26.24 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max3 mΩ
Rise Time70 ns
Turn-Off Delay Time110 ns
Voltage Rating (DC)55 V