공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-04-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-01-15
LTD Date2015-07-15
관련 부품
InfineonIPI032N06N3GAKSA1
MOSFET N-CH 60V 120A TO262-3 / N-Channel 60 V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3
onsemiHUF75545S3
75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET | MOSFET N-CH 80V 75A TO-262AA
설명
유통업체에서 제공한 Rochester Electronics IPI034NE7N3G에 대한 설명입니다.
Trans MOSFET N-CH 75V 100A 3-Pin TO-262 Tube
IPI034NE7 POWER FIELD-EFFECT TRANSISTOR;
Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
제조업체 별칭
Rochester Electronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Rochester Electronics는 다음 이름으로도 알려져 있습니다:
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
기술 사양
Physical
Case/PackageTO-262-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance3.4 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.13 nF
Max Operating Temperature175 °C
Max Power Dissipation214 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation214 W
Rds On Max3.4 mΩ
Rise Time85 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time16 ns