Infineon IPI075N15N3GXKSA1

OPTLMOS N-CHANNEL POWER MOSFET / N-Channel 150 V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3-1

Power MOSFET, N Channel, 150 V, 100 A, 0.0062 ohm, TO-262, Through Hole

Power Field-Effect Transistor, 100A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

150V 100A 6.2m´Î@10V100A 300W 3V@270uA 10pF@75V N Channel 5.47nF@75V 70nC@0~10V -55¡Í~+175¡Í@(Tj) PG-TO262-3 MOSFETs ROHS

The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

MOSFET, N CH, 100A, 150V, PG-TO262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; Current Id Max:100A; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 120 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 7.5 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 46 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 300