공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-09
LTD Date2019-02-09
관련 부품
InfineonIPI80N06S207AKSA2
55V, N-Ch, 6.6 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™, PG-TO262-3-3, RoHS
InfineonIPI80N06S207AKSA2
55V, N-Ch, 6.6 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™, PG-TO262-3-3, RoHS
설명
유통업체에서 제공한 STMicroelectronics STB80NF55L-08-1에 대한 설명입니다.
N-Channel 55V - 0.0065Ohm - 80A - I2PAK StripFET(TM) II POWER MOSFET
Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) I2PAK Tube
300W(Tc) 16V 2.5V@ 250¦ÌA 100nC@ 4.5 V 1N 55V 8m¦¸@ 40A,10V 80A 4.35nF@25V I2PAK
Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance4.35 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max8 mΩ
Rise Time145 ns
Turn-Off Delay Time85 ns
Turn-On Delay Time35 ns