가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IPD65R660CFDAATMA1 | 4,015 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IPD65R660CFDAATMA1 | 2,500 | 1 | |||||||||
| Rochester Electronics | IPD65R660CFDAATMA1 | 15,000 | 22h | |||||||||
| DigiKey | 448-IPD65R660CFDAATMA1CT-ND | 3,472 | 1 | Cut Tape | ||||||||
| Future Electronics | IPD65R660CFDAATMA1 | 0 | 2500 | Tape & Reel |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-07-12
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIPD65R600C6BTMA1
Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R / 650V CoolMOS C6 Power Transistor
STMicroelectronicsSTD11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package
VishaySIHD6N62E-GE3
78W(Tc) 30V 4V@ 250¦ÌA 34nC@ 10 V 1N 620V 900m¦¸@ 3A,10V 6A 578pF@100V TO-252AA 2.38mm
설명
유통업체에서 제공한 Infineon IPD65R660CFDAATMA1에 대한 설명입니다.
Trans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) DPAK T/R
62.5W 20V 4.5V 20nC@ 10V 1N 650V 660m¦¸@ 10V 6A 543pF@ 100V TO-252 , 6.5mm*6.22mm*2.3mm
Mosfet, N-Ch, 650V, 150Deg C, 62.5W Rohs Compliant: Yes |Infineon Technologies IPD65R660CFDAATMA1
IPD65R660CFDA Series 650 V 6 A 0.66 Ohm Single N-Channel MOSFET - TO-252-3
650V 6A 594mΩ@10V,3.2A 62.5W 4V@200uA 1 N-Channel TO-252-2 MOSFETs ROHS
Metal Oxide Semiconductor Field Effect Transistor
MOSFET N-CH 650V 6A TO252-3 AUTOMOTIVE
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)6 A
Drain to Source Resistance660 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance543 pF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation62.5 W
Min Breakdown Voltage650 V
Min Operating Temperature-40 °C
Number of Elements1
On-State Resistance660 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation62.5 W
Rds On Max660 mΩ
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time9 ns
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
규정 준수 정책