관련 부품
onsemiNDD60N550U1T4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.2A Tc 8.2A 94W Tc 600V
STMicroelectronicsSTD11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package
설명
유통업체에서 제공한 Infineon IPD60R520CPATMA1에 대한 설명입니다.
Trans MOSFET N-CH 600V 6.8A 3-Pin TO-252 T/R
Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
COOLMOS N-CHANNEL POWER MOSFET
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
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- Infineon Technologies
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- INFINEO
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- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)6.8 A
Drain to Source Resistance520 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance630 pF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation66 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max520 mΩ
Rise Time12 ns
Turn-Off Delay Time74 ns
Turn-On Delay Time17 ns