가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IPD053N08N3GATMA1 | 5,000 | 2500 | 4d | ||||||||
| Newark | IPD053N08N3GATMA1 | 15,347 | 1 | |||||||||
| Future Electronics | IPD053N08N3GATMA1 | 2,500 | 2500 | Tape & Reel | ||||||||
| Arrow Electronics | IPD053N08N3GATMA1 | 4,088 | 1 | |||||||||
| Rutronik | TMOS2526 | 7,500 | 2500 | 4h |
공급망
Country of OriginGermany, Malaysia, South Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-01-25
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
LTB Date2016-04-30
LTD Date2016-10-31
관련 부품
InfineonIPD90N08S405ATMA1
Mosfet, N-Ch, 80V, 175Deg C, 144W Rohs Compliant: Yes |Infineon Technologies IPD90N08S405ATMA1
onsemiFDD86367-F085
MOSFET N-CH 80V 100A DPAK / N-Channel 80 V 100A (Tc) 227W (Tj) Surface Mount TO-252AA
InfineonIRFR7540TRPBF
Trans MOSFET N-CH Si 60V 110A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 90A DPAK
VishaySQD97N06-6M3L_GE3
136W(Tc) 20V 2.5V@ 250¦ÌA 125nC@ 10 V 1N 60V 6.3m¦¸@ 25A,10V 97A 6.06nF@25V TO-252AA 2.38mm
STMicroelectronicsSTD110N8F6
N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package
설명
유통업체에서 제공한 Infineon IPD053N08N3GATMA1에 대한 설명입니다.
Power MOSFET, N Channel, 80 V, 90 A, 0.0053 ohm, TO-252 (DPAK), Surface Mount
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Power Field-Effect Transistor, 90A I(D), 80V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 90A, 80V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)90 A
Drain to Source Resistance5.3 mΩ
Drain to Source Voltage (Vdss)80 V
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.57 nF
Max Dual Supply Voltage80 V
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance5.3 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation150 W
Rds On Max5.3 mΩ
Rise Time66 ns
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time18 ns
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책