공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-15
Lifecycle StatusProduction (Last Updated: 8 months ago)
관련 부품
InfineonIPD90N06S405ATMA2
60V, N-Ch, 5.1 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
InfineonIPD90N06S4L05ATMA2
60V, N-Ch, 4.6 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
InfineonIPD90N06S405ATMA2
60V, N-Ch, 5.1 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
onsemiFDD86369-F085
Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET, TO-252AA
VishaySQD97N06-6M3L_GE3
MOSFET 136W(Tc) 20V 2.5V@250µA 125nC@10V 1 N-Ch 60V 6.3mΩ@25A,10V 97A 6.06nF@25V TO-252AA SMD 2.38mm H
Diodes Inc.DMTH6010LK3-13
MOSFET N-CH 60V 14.8A/70A TO252 / N-Channel 60 V 14.8A (Ta), 70A (Tc) 3.1W (Ta) Surface Mount TO-252-3
설명
유통업체에서 제공한 STMicroelectronics STD110N8F6에 대한 설명입니다.
N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package
Power Field-Effect Transistor, 80A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Split Gate Trench Mosfet FET, TO-252
167W(Tc) 20V 4.5V@ 250µA 150nC@ 10 V 1individualNChannel 80V 6.5mΩ@ 40A,10V 80A 9.13nF@40V DPAK SMD mount 2.63mm(height)
MOSFET, N-CH, 80V, 80A, 175DEG C, 167W; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 167W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET F6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vds)80 V
Input Capacitance9.13 nF
Max Operating Temperature175 °C
Max Power Dissipation167 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Rds On Max6.5 mΩ
Schedule B8541290080