대체 부품
Price @ 1000
$ 0.726
Stock
200,562
877,826
Authorized Distributors
0
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-252-3
TO-252-3
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
90 A
90 A
Threshold Voltage
-
3.7 V
Rds On Max
4.8 mΩ
4.8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
140 W
Input Capacitance
4.36 nF
4.36 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-03-12
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
관련 부품
InfineonIRFR7540TRPBF
Trans MOSFET N-CH Si 60V 110A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 90A DPAK
InfineonIPD100N06S403ATMA2
Power MOSFET, N Channel, 60 V, 100 A, 0.0035 ohm, TO-252 (DPAK), Surface Mount
설명
유통업체에서 제공한 Infineon IRFR7540PBF에 대한 설명입니다.
Single N-Channel 60 V 4 mOhm 86 nC HEXFET® Power Mosfet - TO-252AA
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)90 A
Drain to Source Resistance4.8 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.36 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance4.8 mΩ
Package Quantity3000
Power Dissipation140 W
Rds On Max4.8 mΩ
Rise Time38 ns
Schedule B8541290080
Turn-Off Delay Time59 ns
Turn-On Delay Time8.7 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm