가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IPB120N08S404ATMA1 | 35,933 | 9h | |||||||||
| DigiKey | 448-IPB120N08S404ATMA1CT-ND | 993 | 1 | Cut Tape | ||||||||
| Farnell | IPB120N08S404ATMA1 | 808 | 1 | Cut Tape | 9h | |||||||
| Mouser | 726-IPB120N08S404ATM | 2,468 | 1 | Tape & Reel | ||||||||
| Verical | IPB120N08S404ATMA1 | 840 | 170 |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-06-20
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2024-02-29
LTD Date2024-08-31
관련 부품
STMicroelectronicsSTH145N8F7-2AG
Mosfet, N-Ch, 80V, 90A, H2Pak-2 Rohs Compliant: Yes |Stmicroelectronics STH145N8F7-2AG
STMicroelectronicsSTH140N8F7-2
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
Diodes Inc.DMTH6004SCTB-13
Mosfet, N-Ch, 60V, 100A, To-263Ab Rohs Compliant: Yes |Diodes Inc. DMTH6004SCTB-13
STMicroelectronicsSTH170N8F7-2
N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package
설명
유통업체에서 제공한 Infineon IPB120N08S404ATMA1에 대한 설명입니다.
MOSFET N-CH 80V 120A D2PAK / N-Channel 80 V 120A (Tc) 179W (Tc) Surface Mount PG-TO263-3
80V, N-Ch, 4.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
Infineon SCT
Mosfet, N-Ch, 80V, 120A, To-263 Rohs Compliant: Yes |Infineon IPB120N08S404ATMA1
Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 120A I(D), 80V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Resistance4.1 mΩ
Drain to Source Voltage (Vdss)80 V
Input Capacitance6.45 nF
Max Dual Supply Voltage80 V
Max Operating Temperature175 °C
Max Power Dissipation179 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.1 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation179 W
Rds On Max4.1 mΩ
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
규정 준수 정책