공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-02-06
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2025-05-31
LTD Date2025-11-30
관련 부품
InfineonAUIRFS4127
MOSFET N-CH 200V 72A D2PAK / N-Channel 200 V 72A (Tc) 375W (Tc) Surface Mount PG-TO263-3
VishaySUM85N15-19-E3
Trans MOSFET N-CH 150V 85A Automotive 3-Pin(2+Tab) D2PAK / MOSFET N-CH 150V 85A D2PAK
International RectifierAUIRFS4115
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
InfineonAUIRFS4115TRL
MOSFET N-CH 150V 99A D2PAK / N-Channel 150 V 99A (Tc) 375W (Tc) Surface Mount D2PAK
설명
유통업체에서 제공한 Infineon IPB117N20NFDATMA1에 대한 설명입니다.
Power MOSFET, N Channel, 200 V, 84 A, 0.0103 ohm, TO-263 (D2PAK), Surface Mount
Power Field-Effect Transistor, 84A I(D), 200V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.
MOSFET, N-CH, 200V, 84A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0103oh; Available until stocks are exhausted Alternative available
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.946308 g
Technical
Continuous Drain Current (ID)84 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance11.7 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5 nF
Max Dual Supply Voltage200 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance11.7 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation300 W
Rds On Max11.7 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time24 ns
Turn-On Delay Time13 ns
Dimensions
Height4.82 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책